Tailoring Crystallographic Orientations to Substantially Enhance Charge Separation Efficiency in Anisotropic BiVO4 Photoanodes

In photoelectrochemical (PEC) water splitting, BiVO 4 is considered the most promising photoanode material among metal oxide semiconductors because of its relatively narrow optical bandgap and suitable band structure for water oxidation. Nevertheless, until now, the solar-to-hydrogen conversion efficiency of BiVO 4 has shown significant limitations for commercialization because of its poor charge transport. Various strategies, including the formation of a heterojunction and doping of electron donors, have been implemented to enhance the charge transport efficiency; however, fundamental approaches are required for further enhancement. In this regard, we report the fundamental approach for BiVO 4 thin film photoanodes by fabricating epitaxial oxide thin films with different crystallographic orientations for PEC water splitting. The crystalline anisotropy generally reveals distinct physical phenomena along different crystallographic orientations. In the same vein, in terms of the anisotropic properties of BiVO 4, the electrical conductivity of BiVO 4 is greater along the ab -plane than along the c -axis. Consequently, as the crystallographic orientation of the BiVO 4 thin film changes from (001) to (010), the charge transport properties in the epitaxial BiVO 4 thin film are significantly enhanced. Thus, at 1.23 V RHE, the photocurrent density of the epitaxial BiVO 4 (010) thin film (2.29 mA cm –2 ) is much higher than that of the epitaxial BiVO 4 (001) thin film (0.74 mA cm –2 ) because of significant enhancement in charge transport properties even for undoped BiVO 4 . These results strongly suggest that the growth of epitaxial BiVO 4 thin films with specific crystallographic orientations has great potential to considerably improve the charge transport efficiency of photoanodes for solar water splitting.