Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1μm by metalorganic vapor phase epitaxy

We report on the effect of antimony surfactant on the growth of strained InGaAs multiple-quantum-well (MQW) structure by metalorganic vapor phase epitaxy and the application of the structure to buried-heterostructure (BH) lasers. For a 1.85%-strained MQW, supplying a small amount of antimony during well growth is effective in suppressing the three-dimensional growth and increasing the photoluminescence peak intensity at a wavelength of 2.09μm. The secondary ion mass spectroscopy measurement reveals that hardly any antimony is incorporated into the wells. The fabricated BH laser has an emission wavelength of 2.103μm under continuous-wave operation at 25 °C.