Strained InAs/InP quantum well heterostructure lasers grown by low-pressure metalorganic chemical vapor deposition

This letter reports the successful operation at room temperature of a separate confinement heterostructure InAs/InGaAs/InP strained-layer multiple quantum well laser grown by low-pressure metalorganic chemical vapor deposition. The threshold current density was as low as 250 A/cm2 for a 600×200 μm broad area laser device. The characteristic temperature T0 was found to be 190 K between 100 and 130 K, and 147 K between 130 and 300 K. The lasing wavelength was 1.7 μm at room temperature.