Transition from two-dimensional to three-dimensional growth mode has been investigated by photoluminescence in highly strained InxGa1−xAs/GaAs (0.36≤x≤1) single quantum wells. The structures were grown by molecular beam epitaxy from 410 to 590 °C. The critical layer thickness based on this transition decreased as the growth temperature increased. This behavior was well described by the single-kink Matthews model [J. Vac. Sci. Technol. 12, 126 (1975)] including the simplest expression of the Peierls–Nabarro friction stress [J. Appl. Phys. 41, 3800 (1970)].
No takes yet. Share an insight, caveat, or question.
Wang et al. (1992) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: