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Bipolar cascade lasers with quantum wells (QWs) in tunnel junctions are proposed and demonstrated with emission wavelength near 2 μm based on an InGaAs/InP material system. These bipolar cascade lasers with QW tunnel junctions exhibited superior performance characteristics such as significantly reduced threshold voltage, increased quantum efficiency (>100%) and operation temperature over similar lasers without a QW in the tunnel junction. These broad-area lasers operated at temperatures up to 240 K in continuous wave mode and up to room temperature in pulsed mode.
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Yang et al. (2003) studied this question.
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