We have successfully formed two‐dimensionally ordered InGaAs and InAs quantum dots (QDs) by controlling the nucleation sites on artificially prepared nano‐hole arrays with a 100 nm periodicity. The ordered InGaAs QDs were realized by a combination of a low‐temperature deposition of InGaAs and its annealing on the nano‐hole arrays. These ordered InGaAs played a role as a template for upper InAs QDs. In this study, we used in situ scanning tunneling microscopy (STM), which enabled us to observe each grown surface on the samples.
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Nakamura et al. (2003) studied this question.
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