Formation of misfit dislocations during growth of InxGa1-xAs/GaAs strained-layer heterostructures

Transmission electron microscopy of GaAs/In x Ga 1- x As/GaAs double heterostructures has enabled the onset and subsequent development of misfit dislocations to be followed for increasing strained-layer thicknesses, from sub- to supercritical. It has been observed that misfit segments are introduced into threading dislocations when the strained-layer thickness is close to, but below, the critical thickness predicted by the Matthews-Blakeslee (M-B) model. Analysis shows that threading dislocations may be able to glide to form interfacial misfit dislocation segments even though the critical thickness predicted by the M-B model has not been reached. It has also been observed that the total dislocation density rises slowly as the layer thickness increases above its critical value, until a sudden increase occurs. It is suggested that the sudden increase in dislocation density is associated with a different mechanism of misfit dislocation formation, which dominates the global relaxation of the structure.