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January 1, 1989Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular-beam epitaxial growth of InGaAs single quantum wells on GaAs

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DRD.C. RadulescuIuliu Hațieganu University of Medicine and PharmacyWSW. J. SchaffLinköping UniversityLEL.F. EastmanCornell University

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Cite This Study

Radulescu et al. (1989) studied this question.

synapsesocial.com/papers/6a8a64356fc170cbc2fbe97ahttps://doi.org/10.1116/1.584432
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