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Very-low-energy ({}28 eV), high-flux ({}0.4 mA/cm²) Ar-ion irradiation during molecular-beam epitaxy changed the nucleation of GaAs on Si(100) from Stranski-Krastanov to a mechanism approaching layer-by-layer growth. While three-dimensional island nucleation was eliminated, the growth surface exhibited low-amplitude undulations. The results are explained by ion-induced removal of atoms from stable 3D islands, which suppressed 3D island nucleation.
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Choi et al. (1991) studied this question.
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