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The growth by molecular-beam epitaxy of high-quality Ga0.85In0.15As0.13Sb0.87 active layers with Al0.4Ga0.6As0.035Sb0.965 cladding layers on GaSb substrates by molecular-beam epitaxy is reported. The lattice match of the active layer to the substrate is Δa/a ∼4 ×10−3. Optically pumped laser oscillation was observed from 80 to 300 K with T0=55 K for T<225 K and T0=32 K for 225
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Ziel et al. (1986) studied this question.
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