Room Temperature Operation of the InGaAsSb/AlGaAsSb DH Laser at 1.8 µm Wavelength

The In 0.05 Ga 0.95 As 0.04 Sb 0.96 /Al 0.2 Ga 0.8 As 0.02 Sb 0.98 DH lasers, which can be operated at room temperature, were fabricated by the LPE method. Their emission wavelength and threshold current density at room temperature are 1.8 µm and 5 kA/cm 2 respectively. Their characteristic temperature, defined as T 0 =Δ T /Δln J th is 112 K, which is higher than those of InGaAsP/InP DH lasers. Optical output pulse response exhibited sufficiently short rise time, and the spontaneous carrier lifetime around the threshold current was estimated to be 3 ns at room temperature.