DH Lasers Fabricated by New III-V Semiconductor Material InAsPSb

Double heterostructure wafers composed of p-InAs 0.82 P 0.10 Sb 0.08 /n-InAs 0.94 P 0.04 Sb 0.02 /n-InAs 0.82 P 0.12 Sb 0.06 were grown on (001) oriented n-InAs substrates by liquid phase epitaxy. Stripe geometry lasers were fabricated from these wafers. The emission wavelength and the threshold current density of these lasers at 77 K were 3.0 µm and about 3 kA/cm 2 , respectively. Their threshold current density ( J th ) was quite sensitive to the ambient temperature; the characteristic temperature T 0 , defined as T 0 = Δ T / Δ In J th was 23 K in the temperature range between 77 K and 145 K.