Heterojunction bipolar transistors incorporating a Schottky collector have been fabricated in In0.53Ga0.47As/In0.52Al0.48As grown by molecular beam epitaxy. Devices show very high emitter-base junction saturation current densities, low offset voltages and current gain greater than unity (≃2.5) in spite of the fact that no attempt was made to isolate the extrinsic base-emitter junction.
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Vlcek et al. (1986) studied this question.
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