Lifetime broadening in GaAs-AlGaAs quantum well lasers

Experimental observations of spontaneous emission spectra from GaAs-AlGaAs quantum well lasers shown that spectral broadening should be included in any realistic model of laser performance. A model of the lifetime broadening due to intraband Auger processes of the Landsberg type is described and developed for the case of electron-electron scattering in a 2-D system. The model is applied to the calculation of gain and spontaneous emission spectra and gain-current relationships in short-wavelength GaAs-AlGaAs quantum well lasers, and the results are compared with those obtained using both a fixed intraband scattering time and one that varies as n/sup -1/2/, where n is the volume injected carrier density.>