Enhanced characteristics of InGaAsP buried quaternary lasers with pressures up to 1.5 GPa

Pressure dependent measurements of the threshold current, differential quantum efficiency, and lasing wavelength of a ∼1.3 μm bulk InGaAsP semiconductor laser performed in a diamond anvil cell up to 1.5 GPa are reported. Results show a 40% decrease in the threshold current and a simultaneous enhancement in the differential quantum efficiency of approximately 350%. Large wavelength tunability of 140 nm is observed in this pressure range at room temperature. Calculations indicate that a reduction of the Auger recombination rate is likely to be the dominant loss mechanism responsible for the observed changes in the laser threshold current in this pressure range.