Submilliampere threshold current in 1.3 µmInAsP n -type modulation doped MQW lasers grown bygas source molecular beam epitaxy

A very low CW threshold current of 0.9 mA has been obtained in a 1.3 µm InAsP n-type modulation doped MQW laser at room temperature. This is the lowest threshold current ever reported for long-wavelength lasers using n-type modulation doping, and the lowest result grown by gas source molecular beam epitaxy in the long wavelength region.