Interface States and P[sub b] Defects at the Si(100)/HfO[sub 2] Interface

Defects present at the interface are analyzed using a combination of electron spin resonance (ESR) and frequency-dependent impedance analysis. The 3.4 nm layers were formed by injection metalorganic chemical vapor deposition on boron-doped silicon (100) substrates. ESR spectra indicate the presence of defects while analysis of the low-frequency (20 Hz) capacitance-voltage (CV) response indicates a defect density of between 0.1 and 0.56 eV above the valence bandedge with the peak density located at Analysis of conductance data reveals an interface state density of with a peak density observed at These results provide a link between the density of centers measured by ESR, and the electrical active defects measured from CV and conductance analysis. This provides an explanation for the nonideal, frequency-dependent features in the region between accumulation and strong inversion for high-κ MOS structures.