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Strain-compensated InAlAs/InGaAs HEMT structures, grown on InP substrate, have been investigated in terms of structural and electrical properties. From detailed x-ray diffraction (XRD) investigations the compensation index and the evolution of the strain state were measured. We show that a partial and controlled strain compensation significantely improves the structural quality and the thermal stability of HEMT structures as well as their electrical properties.
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Letartre et al. (1999) studied this question.
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