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Distribution profiles and annealing characteristics of defects in GaAs induced by various (0.1–150 keV) energy Ga-focused ion-beam (FIB) irradiation were measured by means of deep-level transient spectroscopy and C-V carrier profiling to reveal the importance of low-energy beams for damage-free device processing. Four different electron traps were induced by the irradiation and observed at >2000 A, a depth far deeper than the ion range (about 15 A for 1 keV Ga). The defects were reduced by decreasing the ion energy and easily annealed out, and full recovery in carrier density occurred after annealing at 600°C.
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Miyake et al. (1988) studied this question.
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