Structural changes due to annealing of silicon films obtained by chemical vapor deposition in a low-pressure reactor on thermally oxidized silicon wafers are investigated using high-voltage (HVEM) and high-resolution electron microscopy (HREM). The annealing treatment is carried out “in-situ” in the vacuum of the column of the electron microscope, in an oxidizing ambient, and on air. In some cases pulse annealing is applied using flash lamp irradiation or recrystallization by a movable focussed light stripe (μ-zone melting recrystallization).
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Edelman et al. (1986) studied this question.
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