Observation of anodic oxide-film growth on GaAs by i n s i t u differential reflectance

The anodic film growth on GaAs during the anodization process and the dissolution of the grown film in the open-circuit condition have been observed with the in situ differential reflectance technique. It is shown that the dissolution curve of the grown film is useful in characterization of the film rather than the anodization curve. The anodic process in the open-circuit transient region is discussed.