Epitaxy is the phenomenon in which the orientation of a crystal 0 which grows on a crystalline substrate S, usually different from 0, is related to that of S, even though their normal lattices do not match at their common interface. Apart from its fundamental interest, epitaxy is important in view of its application in the fabrication of devices where structural perfection is essential for performance and stability. Misfit is detrimental to crystal perfection.
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Jan H. van der Merwe (1978) studied this question.
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