The initial adsorption of oxygen on Si(111) surfaces proceeds via a molecular intermediate which is precursor to the stable dissociated adsorption state. This metastable precursor can only be observed under certain conditions; its conversion to the stable state depends on temperature, probe, surface structure, impurities, and oxygen coverage. The precursor is likely to be a peroxy-bridge configuration whereas the stable dissociated oxygen species forms short-bridge bonds between adjacent Si atoms.
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Höfer et al. (1985) studied this question.
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