A new approach to low-temperature growth of Si oxide was discussed in which SiOxwas first vacuum-evaporated on Si substrate and then treated in a magnetically excited oxygen plasma (helicon wave) at room temperature. Fairly thick oxide film was obtained. However, the quality of the oxide film was somewhat inferior to those of the oxide grown by direct oxidation of Si with helicon-wave-excited plasma.
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Kitayama et al. (1995) studied this question.
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