Low-temperature preparation of SiO2/Si(100) interfaces using a two-step remote plasma-assisted oxidation-deposition process

SiO2/Si(100) interfaces have been prepared by a low-temperature, 200–300 °C, remote plasma-assisted oxidation-deposition process. The oxidation: (i) creates ∼0.5 nm of SiO2; (ii) removes residual C from an otherwise H-terminated Si surface; and (iii) produces a SiO2/Si interface with a midgap trap density of ∼1×1010 cm−2 eV−1, and when combined with remote plasma-enhanced chemical vapor deposition (RPECVD) of SiO2, (iv) forms a SiO2/Si structure with properties comparable to those prepared by thermal oxidation of Si at 850–1050 °C.