Surface extended x-ray absorption fine structure (EXAFS) measurements are reported above the O K absorption edge (∠535 eV) for oxygen chemisorbed on Si(111). For the investigated initial oxidation stage—characterized by a Si 2p chemical shift of 2.5 eV—we find the O–Si bond length to be closely the same (within 0.05 Å) as in bulk SiO2. Comparative analysis of the relative EXAFS amplitude with that for SiO2 provides information on the oxygen bonding geometry on the Si(111) surface.
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Stöhr et al. (1979) studied this question.
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