Experimental study demonstrates dynamic range extension in dual-mode CMOS image sensors, indicating enhanced charge storage under high-intensity lighting conditions.
This paper presents a wide dynamic range complementary metal oxide semiconductor (CMOS) image sensor with column capacitor and feedback structure. The designed circuit has been fabricated by using 0.18μm 1-poly 6-metal standard CMOS technology. This sensor has dual mode operation using combination of active pixel sensor (APS) and passive pixel sensor (PPS) structure. The proposed pixel operates in the APS mode for high-sensitivity in normal light intensity, while it operates in the PPS mode for low-sensitivity in high light intensity. The proposed PPS structure is consisted of a conventional PPS with column capacitor and feedback structure. The capacitance of column capacitor is changed by controlling the reference voltage using feedback structure. By using the proposed structure, it is possible to store more electric charge, which results in a wider dynamic range. The simulation and measurement results demonstrate wide dynamic range feature of the proposed PPS.
No takes yet. Share an insight, caveat, or question.
Lee et al. (2015) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: