Displacement Sensing With Silicon Flexures in MEMS Nanopositioners

We report a novel piezoresistive microelectromechanical system (MEMS) differential displacement sensing technique with a minimal footprint realized through a standard MEMS fabrication process, whereby no additional doping is required to build the piezoresistors. The design is based on configuring a pair of suspension beams attached to a movable stage so that they experience opposite axial forces when the stage moves. The resulting difference between the beam resistances is transduced into a sensor output voltage using a halfbridge readout circuit and differential amplifier. Compared with a single piezoresistive flexure sensor, the design approximately achieves 2, 22, and 200 times improvement in sensitivity, linearity, and resolution, respectively, with 1.5-nm resolution over a large travel range exceeding 12 μm.