Electrical and Morphological Properties of ALD and AVD Grown Perovskite-Type Dielectrics and Their Stacks for Metal-Insulator-Metal Applications

Atomic Vapor Deposition (AVD) and Atomic Layer Deposition (ALD) techniques were successfully applied for the depositions of perovskite type dielectrics, namely, Sr-Ta-O, Ti-Ta-O, Sr-Ti-O, Ba-Hf-O, Nb-Ta-O and Ce-Al-O. Thin films were investigated as alternative dielectrics for Metal-Insulator-Insulator (MIM) capacitors. Morphological and electrical properties were investigated after depositing the oxides on 200 mm TiN/Si (100) substrates in the temperature range of 225–400 °C. Electrical properties, investigated after sputter deposition of the Au top electrodes, revealed that the main characteristics were different for each dielectric. The highest dielectric constants were achieved for crystalline SrTiO 3 (k = 95), crystalline CeAlO 3 (k = 60) and amorphous Ti-Ta-O (k = 50) films. However, Sr-Ta-O based MIM capacitors showed the lowest leakage current densities as well as the smallest capacitance-voltage linearity coefficients. After identification of the properties of single oxide based MIMs, the alternative solutions with stacked SrTiO 3 /SrTaO and SrTiO 3 /Al 2 O 3 dielectrics, which possessed superior electrical properties are proposed and investigated.