Dielectric property of (TiO2)x−(Ta2O5)1−x thin films

( TiO 2 ) x −( Ta 2 O 5 ) 1−x thin films were prepared with radio-frequency magnetron sputtering deposition in this study. The dielectric constant measured from these films appears to critically depend on the amount of TiO2 incorporated into the film and post-anneal condition. The composition dependence was found similar to that reported on (TiO2)x−(Ta2O5)1−x bulk. The highest value of dielectric constant is about 55 for a TiO2 content of 8% and annealing at 800 °C. Compared to pure Ta2O5 thin films, significant enhancement in dielectric constant is obtained by adding small quantity of TiO2.