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March 1, 1991IEEE Transactions on Electron Devices

UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs

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Authors

HSH. ShinrikiASM InternationalMNMasami NakataKanazawa University

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Shinriki et al. (1991) studied this question.

synapsesocial.com/papers/6a6fcb5326770c2b8de02be5https://doi.org/10.1109/16.75185
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Two-step annealing technique for leakage current reduction in chemical-vapor-deposited Ta/sub 2/O/sub 5/ film1989 · 43 citations
  2. 2Promising storage capacitor structures with thin Ta/sub 2/O/sub 5/ film for low-power high-density DRAMs1990 · 120 citations
  3. 3Chemical Vapor Deposition of Tantalum Pentoxide Films for Metal‐Insulator‐Semiconductor Devices1976 · 52 citations
  4. 4Ultra-thin Ta2O5dielectric film for high-speed bipolar memories1987 · 57 citations
  5. 5O(1S) yield from O3 photodissociation at 1700–2400 Å1980 · 17 citations