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The absolute value of the `forbidden' (222) structure amplitude of silicon is measured by the Pendellösung method. Traverse topographs from a wedge-shaped, dislocation-free crystal are obtained at room temperature, using Cu K α 1 radiation from a rotating anode generator. From the position of the first maximum of thickness fringes the F (222)e - M value is derived as 1.64 5 ±.03 4 .
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Fehlmann et al. (1975) studied this question.
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