We show that the low-temperature resistivity of amorphous and disordered metals is described by a square-root variation with temperature, as suggested by various scaling theories of the metal-insulator transition. The coefficient Δ (the correlation gap) has the identical dependence on resistivity, Δ~ρ^-2, reported for materials with resistivity up to three orders of magnitude greater.
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Cochrane et al. (1984) studied this question.
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