A ZnTe light-emitting diode (LED) was fabricated by Al thermal diffusion through an oxidation layer formed by O radical irradiation onto the surface of the ZnTe. The Al concentration in the diffused layer could be controlled by changing the O radical irradiation time, because this changes the thickness of the oxidation layer, resulting in a change in the Al concentration on ZnTe surface. The performance of the ZnTe LED strongly depends on the O radical irradiation time. Strong electroluminescence was observed in the ZnTe LEDs.
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Tanaka et al. (2008) studied this question.
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