Temperature-dependent resistivity of heavily doped silicon and germanium

We present a calculation of the temperature-dependent resistivity for heavily doped silicon and germanium. In addition to the contribution from impurity scattering, we include the contribution from electron-electron scattering, caused by the anisotropy of the conduction-band minima. The effects from this anisotropy on the impurity contribution are fully taken into account as well. We use the generalized Drude approach, which leads to results in closed form.