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The low temperature line-broadening of the electron cyclotron resonance in boron-doped silicon observed in the past experiment is reinterpreted in the light of new observation with the time-resolving method. The contribution of lifetime broadening once suggested is negated and scattering by A + centers, or positively charged acceptors, is now considered the most dominant source for making the linewidth.
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Ohyama et al. (1973) studied this question.
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