High power light emission of IV–VI lead salt multiple-quantum-well structure grown by molecular-beam epitaxy on 〈111〉 BaF2 substrate

Up to 4.9 W peak output power at room temperature and 61.5 W at 180 K were observed from photoluminescence of a PbSe/PbSrSe multiple-quantum-well (MQW) structure grown by molecular-beam epitaxy. Our theoretical calculation indicates that the lifted degeneracy of quantum-well structures on 〈111〉 orientation provides higher modal gain. This plus the improved epitaxial material quality of MQWs contribute to the high output power. The observed output powers are much higher than those of reported light emission of IV–VI lead salt materials.