Electrical properties of semiconducting MoSe2 single crystals doped with Re and with Nb are described. Impurity conduction can be characterized by three activation energies ∊1 > ∊2 > ∊3. At low temperature and for high doping levels a transition to a metallic state is observed. A band model is suggested which accounts for the measured activation energies and is in agreement with the photoemission results and optical data.
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Lévy et al. (1976) studied this question.
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