The uniformity of threshold voltage (Vth) in sequential lateral solidification (SLS) thin-film transistors (TFTs) is investigated. Some SLS TFTs have higher Vthvalues than others, which causes problems in applications requiring a high level of TFT uniformity such as active-matrix organic light-emitting diode displays. Focused ion beam observations revealed that all TFTs with high Vthvalues had protrusions 3000- 7000 Å from the junction. Using a smart tilted-channel structure decreased the Vthvariation to less than 0.2 V.
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Kang et al. (2011) studied this question.
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