We present a study of interface roughness scattering in not-intentionally-doped AlSb/InAs/AlSb quantum wells grown by molecular beam epitaxy on [001] GaAs semi-insulating substrates. The low-temperature mobility is found to be limited by interface roughness scattering for well widths below 100 Å. The measured mobilities are well accounted for by Gold’s theoretical treatment [A. Gold, Phys. Rev. B 35, 723 (1987)], once it is suitably modified to account for the band nonparabolicity of InAs. The experimental electron density dependence of the mobility indicates a lateral correlation length for the interface roughness Λ≊62 Å for interface fluctuations approximately 1 monolayer high. We believe this roughness scale is characteristic of the bottom (InAs-on-AlSb) interface.
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Bolognesi et al. (1992) studied this question.