We have explored the effects of various processing parameters on the dielectric and electronic integrity of sol-gel-derived silicate thin films and have identified several factors that strongly affect the thin-film electronic properties. We find that sol-gel dielectrics can exhibit excellent dielectric integrity: viz., low interface trap densities and fairly good insulating properties approaching those of a thermally grown silicon dioxide film on silicon.
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Warren et al. (1991) studied this question.
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