Comparative analysis of long-wavelength (1.3 µm) VCSELs on GaAs substrates

Two designs of vertical-cavity surface-emitting lasers (VCSELs) for the 1.3 µm spectral range on GaAs substrates with active regions based on InAs/InGaAs quantum dots and InGaAsN quantum wells are considered. The relationship between the active region properties and optical microcavity parameters required for lasing has been investigated. A comparative analysis is made of VCSELs with active regions based on InAs/InGaAs quantum dots or on InGaAsN quantum wells, which are fabricated by MBE and demonstrate room-temperature CW operation. Optimization of the vertical microcavity design provides single-pass internal optical losses lower than 0.05%.