Insights into carrier recombination processes in1.3 µm GaInNAs-based semiconductor lasers attained using high pressure

The threshold current of 1.3 µm GaInNAs lasers increases by ~30% up to a pressure of 1 GPa compared with a decrease of ~15% for Auger-dominated InGaAsP devices, indicating that direct band-to-band Auger recombination is not important in these materials. The lasing energy varies sub-linearly with pressure, indicative of the increasing interaction of the N-level with the conduction band.