Improved temperature dependence of 1.3 µmAlGaInAs-based MQW semiconductor diode lasers revealed by hydrostatic pressure

The threshold current Ith of 1.3 µm AlGaInAs devices increases by ~8% over a 1 GPa pressure range contrasting with decreases of 10–15% in 1.3 µm InGaAsP devices. This can be explained with 50% nonradiative recombination in InGaAsP and only ~20% in AlGaInAs devices, resulting in a much improved temperature dependence of Ith.