InGaAlAs-InP strained multiquantum-well ridge waveguide laser diodes operating at 1300 nm and exhibiting excellent performance have been fabricated. Threshold currents as low as 3.9 mA and T/sub 0/ values as high as 120 K have been measured. These values are the best reported thus far for this material system.
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Chen et al. (1997) studied this question.
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