InAsSb light-emitting diodes for the detection of CO2 (λ=4.3 μm)

The main characteristics of room-temperature light-emitting diodes ( λ =4.3 μ m) based on InAsSbP/InAsSb/InAsSbP III–V semiconductor heterostructures with a variable-gap buffer layer are reported. An optical power P =0.85 mW was achieved with a pulse length of ∼5 μ s and 1 kHz repetition frequency. Conditions for maximizing the power of the light-emitting diodes are indicated. An example is given of the use of these diodes to detect carbon dioxide using the 4.3 μ m fundamental absorption band.