Characterization of seeded-lateral epitaxial layer by microprobe reflection high-energy electron diffraction

The crystallinity and regrowth mechanism of a seeded-lateral epitaxial layer of Si on a SiO2 substrate is evaluated using a newly developed microprobe reflection high-energy electron diffraction method. Measurements with a spatial resolution of 0.1 μm reveal that the lateral seeding process actually occurs in the regrowth process and that the seeding area is indispensable to the process, though a seed length of less than 0.5 μm is required.