Optical dispersion of AlxGa1−xAs at crystal growth temperature

We propose a scheme to calculate the optical dispersion of III-V compounds at crystal growth temperature, based on the Afromowitz’ formula and the shift of the lowest direct band gap energy. The thermal behaviors of the major parameters are extracted from their respective physical meanings. This model is applied to AlxGa1−xAs materials and the calculated results compare quite well with the experimental data. The validity of our model is also tested by comparing the static dielectric constant of GaAs with that of known empirical formula in the temperature range from 200 to 600 K.