Investigation of carrier generation in fully depleted enhancement and accumulation mode SOI MOSFET's

An unified dual gate Zerbst-like technique has been developed to extract the generation lifetime in enhancement and accumulation mode fully depleted SOI MOSFET's. The technique is based on the analysis of the temporal variation of the quasi Fermi levels in the devices, following the application of a suitable voltage step on one of the gates. The analysis resulted in simple Zerbst-like expressions for the drain current transients. Numerical simulations, using PISCES, have been performed to validate the technique and its underlying analysis. The technique has been applied to both kinds of typical fully depleted SIMOX SOI MOSFET's and the measured generation lifetimes were in the range of 0.1 /spl mu/s to 1.0 /spl mu/s.>