Effect of Mixing Hydrogen-Argon on Magnetron Sputtered SiO2 Films

Properties of magnetron sputtered SiO2 films prepared in a 30% hydrogen-70% argon mixed gas have been investigated in comparision with those prepared in argon alone. The results obtained are: (1) The film prepared in argon alone has a remarkable dependence on sputtering pressure, and has a porous film structure with abnormal etching rate, at pressures other than the critical pressure. (2) By mixing hydrogen in the argon, the dependence on sputtering pressure is removed and the SiO2 films are densified.